• DocumentCode
    851106
  • Title

    Secondary breakdown and hot spots in power transistors

  • Author

    Scarlett, R. ; Shockley, W.

  • Author_Institution
    Stanford Industrial Park, Palo Alto, Calif.
  • Volume
    51
  • Issue
    3
  • fYear
    1963
  • fDate
    3/1/1963 12:00:00 AM
  • Firstpage
    513
  • Lastpage
    513
  • Abstract
    Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.
  • Keywords
    Corona; Electric breakdown; Hall effect; Indium; Intermetallic; Power transistors; Semiconductor films; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1963.1964
  • Filename
    1443894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=851106