Title :
2.5 V passive CMOS mixer with 20 dBm P1 dB compression
Author :
De Backer, E. ; Bauwelinck, J. ; Melange, C. ; Matei, E. ; Ossieur, P. ; Qiu, X.Z. ; Vandewege, J. ; Horvath, Samantha
Author_Institution :
INTEC/IMEC, Ghent Univ., Ghent
Abstract :
A passive CMOS down conversion mixer with LO buffer is presented in 0.25 mum SiGe BiCMOS using a 2.5 V supply. With a 60 MHz RF signal input, measurements show that the conversion loss is 2.9 dB, the input-referred 1 dB compression point is 20 dBm and the input- referred noise is -146.8 dBm/Hz. Compared to conventional NMOS mixers, the 1 dB compression point is improved by 9.7 dB. The tradeoffs and the design of the LO buffer, which has a strong impact on the intermodulation distortion, are also presented.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; UHF mixers; buffer circuits; intermodulation distortion; micromechanical devices; passive networks; BiCMOS; LO buffer; NMOS mixers; RF signal input; SiGe; compression point; frequency 60 MHz; gain 9.7 dB; input-referred noise; intermodulation distortion; passive CMOS down conversion mixer; size 0.25 mum; voltage 2.5 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081556
