DocumentCode :
851162
Title :
Transistor reliability after radiation exposure
Author :
Gardner, L.B.
Author_Institution :
Northrop Space Labs., Hawthorne, Calif.
Volume :
51
Issue :
3
fYear :
1963
fDate :
3/1/1963 12:00:00 AM
Firstpage :
514
Lastpage :
514
Abstract :
Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.
Keywords :
Batteries; Degradation; Gamma rays; Neutrons; Nuclear and plasma sciences; Power system reliability; Satellites; Semiconductor diodes; Steady-state; Voltage control;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.1969
Filename :
1443899
Link To Document :
بازگشت