Title :
Nonlinear behaviors of low-temperature-grown GaAs-based photodetectors around 1.3-μm telecommunication wavelength
Author :
Shi, Jin-Wei ; Chen, Yen-Hung ; Gan, Kian-Giap ; Chiu, Yi-Jen ; Bowers, John E. ; Tien, Ming-Chun ; Liu, Tzu-Ming ; Sun, Chi-Kuang
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taiwan, Taiwan
Abstract :
We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under ∼1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of different excitation wavelengths (∼800 and ∼1550 nm) in LTG-GaAs-based PDs, the saturation behaviors at the studied wavelength are more serious and can be attributed to "hot electron" effect of photogenerated carriers. The disclosed unique material properties of LTG-GaAs are important for its applications in ultrafast optoelectronics and understanding its carrier dynamics with the defect states.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; hot carriers; metal-semiconductor-metal structures; photodetectors; transient response; 1.3 micron; GaAs; bandwidth degradation; carrier dynamics; carrier lifetime increase; electrooptical sampling; hot electron effect; impulse responses; low-temperature-grown photodetectors; metal-semiconductor-metal devices; modal absorption constants; nonlinear behavior; photoabsorption process; photogenerated carriers; traveling-wave photodetectors; ultrafast optoelectronics; Absorption; Bandwidth; Degradation; Gallium arsenide; Gallium nitride; Photoconducting materials; Photodetectors; Photonic band gap; Sun; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.819418
