Title :
200 Channel Semiconductor Detectors for X-Ray Computed Tomography
Author :
Naruse, Y. ; Kobayashi, T. ; Jimbo, M. ; Tanoue, T. ; Suzuki, T.
Author_Institution :
Sensor Group, Electron Devices Laboratory, Toshiba R & D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki-city, Kanagawa, 210, Japan
Abstract :
Prototype 200 channel semiconductor detectors for third generation X-ray computed tomography have been developed using surface-barrier diodes fabricated from high-purity n-type silicon. The image reconstruction test was successful, and the relationship between the image quality and the detector characteristics has been studied.
Keywords :
Computed tomography; Image reconstruction; Prototypes; Semiconductor diodes; Silicon; Surface reconstruction; Testing; X-ray detection; X-ray detectors; X-ray imaging;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4331137
