Title :
Intense and sharply structured 1.54 μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBE
Author :
Charasse, M.N. ; Grattepain, C. ; Chazelas, J. ; Hirtz, J.P.
Author_Institution :
Thomson CSF-LCE, Orsay
fDate :
11/10/1988 12:00:00 AM
Abstract :
Er doping of GaAs, AlGaAs and quantum wells (QW) has been achieved by MBE. A new type of Er3+ centre is observed in AlGaAs and QW structures, which is characterised by a main peak at 1.565 μm at 4.5 K. At 300 K, the main peak is always at 1.54 μm. In the case of QW structures, its linewidth goes down to only 1 MeV and it is surrounded by up to 16 less intense peaks
Keywords :
III-V semiconductors; aluminium compounds; erbium; gallium arsenide; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor quantum wells; spectral line breadth; 1.54 micron; Er3+ centre; GaAs-AlGaAs:Er; MBE; linewidth; photoluminescence; quantum wells; room-temperature luminescence;
Journal_Title :
Electronics Letters
