DocumentCode :
851422
Title :
1 Gbit/s RZ zero-bias modulation of extremely low-threshold GaInAsP/InP DFB PPIBH laser
Author :
Ohkura, Y.
Author_Institution :
LSI R&D Lab., Mitsubishi Electric Corp., Hyogo
Volume :
24
Issue :
23
fYear :
1988
fDate :
11/10/1988 12:00:00 AM
Firstpage :
1461
Lastpage :
1462
Abstract :
1 Gbit/s RZ pseudorandom and stable single-longitudinal-mode modulation without bias current has been demonstrated using a GaInAsP/InP DFB PPIBH laser. The results suggest that extremely low-threshold GaInAsP/InP single-longitudinal-mode lasers have the potential of application for long-haul, high-bit-rate transmission without any bias current
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; optical communication equipment; optical modulation; semiconductor junction lasers; 1 Gbit/s; DFB PPIBH laser; GaInAsP-InP; RZ zero-bias modulation; extremely low-threshold; high-bit-rate transmission; stable single-longitudinal-mode modulation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
Filename :
46109
Link To Document :
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