Title :
1 Gbit/s RZ zero-bias modulation of extremely low-threshold GaInAsP/InP DFB PPIBH laser
Author_Institution :
LSI R&D Lab., Mitsubishi Electric Corp., Hyogo
fDate :
11/10/1988 12:00:00 AM
Abstract :
1 Gbit/s RZ pseudorandom and stable single-longitudinal-mode modulation without bias current has been demonstrated using a GaInAsP/InP DFB PPIBH laser. The results suggest that extremely low-threshold GaInAsP/InP single-longitudinal-mode lasers have the potential of application for long-haul, high-bit-rate transmission without any bias current
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; optical communication equipment; optical modulation; semiconductor junction lasers; 1 Gbit/s; DFB PPIBH laser; GaInAsP-InP; RZ zero-bias modulation; extremely low-threshold; high-bit-rate transmission; stable single-longitudinal-mode modulation;
Journal_Title :
Electronics Letters
