Characterization of prototype BTeV silicon pixel sensors before and after irradiation

Author

Coluccia, Maria R. ; Appel, J.A. ; Chiodini, G. ; Christian, D.C. ; Kwan, S.

Author_Institution

Fermi Nat. Accel. Lab., Batavia, IL, USA

Volume

49

Issue

4

fYear

2002

fDate

8/1/2002 12:00:00 AM

Firstpage

1743

Lastpage

1749

Abstract

We report on measurements performed on silicon pixel sensor prototypes exposed to a 200-MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n⁺/n/p⁺ type with multiguard-ring structures on the p⁺-side and p-stop electrode isolation on the n⁺-side. Electrical characterization of the devices was performed before and after irradiation up to a proton fluence of 4×10¹⁴ p/cm². We tested pixel sensors fabricated from normal and oxygen-enriched silicon wafers and with two different p-stop isolation layouts: common p-stop and individual p-stop.

Keywords

proton effects; silicon radiation detectors; 200 MeV; BTeV experiment; Si; Si pixel sensor; Si:O; common p-stop; individual p-stop; multiguard-ring structures; n⁺-side; n⁺/n/p⁺ type; p-stop electrode isolation; p⁺-side; proton irradiation; Cyclotrons; Implants; Lattices; Particle beams; Performance evaluation; Prototypes; Radiation detectors; Sensor phenomena and characterization; Silicon; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.801710

Filename

1043483