• DocumentCode
    85152
  • Title

    Correction to "Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy" [Jul 13 870-872]

  • Author

    Han, Yi ; Huo, Zongliang ; Li, Xin ; Chen, Gang ; Yang, Xu ; Zhang, Dejing ; Wang, Yannan ; Ye, Tian ; Liu, Minggang

  • Author_Institution
    Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
  • Volume
    34
  • Issue
    9
  • fYear
    2013
  • fDate
    Sept. 2013
  • Firstpage
    1200
  • Lastpage
    1200
  • Abstract
    In the above-named article [ibid., vol. 34, no. 7, pp. 870-872, Jul. 2013], the corresponding author is not correctly indicated. Z. Huo and M. Liu should be the authors to whom correspondence for the published letter should be directed toward.
  • Keywords
    Charge carrier processes; Flash memories; Hafnium compounds; Scanning probe microscopy;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2277653
  • Filename
    6581870
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=85152