Title :
Correction to "Investigation of charge loss mechanism of thickness-scalable trapping layer by variable temperature Kelvin probe force microscopy" [Jul 13 870-872]
Author :
Han, Yi ; Huo, Zongliang ; Li, Xin ; Chen, Gang ; Yang, Xu ; Zhang, Dejing ; Wang, Yannan ; Ye, Tian ; Liu, Minggang
Author_Institution :
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Abstract :
In the above-named article [ibid., vol. 34, no. 7, pp. 870-872, Jul. 2013], the corresponding author is not correctly indicated. Z. Huo and M. Liu should be the authors to whom correspondence for the published letter should be directed toward.
Keywords :
Charge carrier processes; Flash memories; Hafnium compounds; Scanning probe microscopy;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2277653
