DocumentCode :
851586
Title :
Room-Temperature Continuous-Wave Operation of 2.3- 
m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers
Author :
Ducanchez, A. ; Cerutti, L. ; Grech, P. ; Genty, F.
Author_Institution :
Inst. Electron. du Sud (IES), Montpellier II Univ., Montpellier
Volume :
20
Issue :
20
fYear :
2008
Firstpage :
1745
Lastpage :
1747
Abstract :
Room-temperature continuous-wave (CW) operation of GaSb-based monolithic microcavity vertical-cavity surface-emitting lasers operating near 2.3 mum is presented. These devices were composed of two n-doped AlAsSb-GaSb Bragg mirrors, a type-I GaInAsSb-AlGaAsSb multiquantum-well active region, and an n++-InAsSb/p++-GaSb tunnel junction. CW laser operation was observed up to 294 K. A CW threshold current density as low as 1.1 kA ldr cm-2 was obtained at 284 K for 60-mum-diameter devices (20-mum-diameter emitting area).
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium compounds; laser beams; laser cavity resonators; laser mirrors; optical pumping; quantum well lasers; surface emitting lasers; AlAsSb-GaSb; CW threshold current density; GaInAsSb-AlGaAsSb; Sb-based electrically pumped monolithic VCSEL; microcavity vertical-cavity surface-emitting lasers; n-doped Bragg mirrors; room-temperature CW laser operation; size 60 mum; temperature 293 K to 298 K; tunnel junction; type-I multiquantum-well active region; wavelength 2.3 mum; Electrically pumped; GaSb; tunnel junction (TJ); vertical-cavity surface-emitting laser (VCSEL);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.2004997
Filename :
4610950
Link To Document :
