• DocumentCode
    851615
  • Title

    Design of Low {V}_{\\pi} High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure

  • Author

    Lu, Qiaoyin ; Guo, Weihua ; Byrne, Diarmuid ; Donegan, John F.

  • Author_Institution
    Sch. of Phys. & Centre for Telecommun. Value-Chain Driven Res., Semicond. Photonics Group, Trinity Coll. Dublin, Dublin
  • Volume
    20
  • Issue
    21
  • fYear
    2008
  • Firstpage
    1805
  • Lastpage
    1807
  • Abstract
    GaAs-based electrooptic phase modulators using an n-i-p-n structure and coplanar waveguide traveling-wave electrodes are designed using the compact 2-D finite-difference time-domain technique and Pade approximation transform. By optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V V pi are predicted for a 5-mm-long modulator.
  • Keywords
    III-V semiconductors; electro-optical modulation; finite difference time-domain analysis; gallium arsenide; high-speed optical techniques; phase modulation; 2-D finite-difference time-domain technique; GaAs; Pade approximation transform; coplanar waveguide traveling-wave electrodes; high-speed travelling-wave electrooptic phase modulators; n-i-p-n structure; size 5 mm; 2-D finite-difference time-domain (FDTD) method; Electrooptic modulator; PadÉ approximation transform; traveling-wave (TW) electrodes;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.2005009
  • Filename
    4610955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=851615