DocumentCode :
851764
Title :
Physically rigorous modeling of internal laser-probing techniques for microstructured semiconductor devices
Author :
Thalhammer, Robert K. ; Wachutka, Gerhard K M
Author_Institution :
Infineon Technol., Munich, Germany
Volume :
23
Issue :
1
fYear :
2004
Firstpage :
60
Lastpage :
70
Abstract :
The space- and time-resolved distributions of charge carriers and temperature in the interior of microstructured semiconductor devices have become accessible to measurement as a variety of internal laser probing techniques has been become available. For a comprehensive theoretical analysis of these novel characterization methods, a physically rigorous model for simulating the entire measurement process is presented in this work. Major steps are the electrothermal device simulation of the sample\´s operating behavior and the calculation of optical-wave propagation through the sample, the lenses, and the aperture holes. We propose a numerically efficient algorithm for simulating wave propagation in large computational domains. The decisive step is the suitable choice of the computational variables which enables a significantly coarser discretization mesh without loosing accuracy. To support the design and the optimization of the experiments, the concept of "virtual experiments" is introduced as the key strategy for a quantitative analysis of the measurement techniques. As an application example, backside laser probing is discussed. It is shown that this technique provides a large measurement range as well as an excellent spatial resolution and, therefore, constitutes a powerful characterization method for a large multitude of different microstructures.
Keywords :
electro-optical effects; light interferometry; light propagation; measurement by laser beam; semiconductor device measurement; semiconductor device models; thermo-optical effects; aperture holes; backside laser probing; charge carrier distribution; electrooptic effect; electrothermal device simulation; interferometry; internal laser-probing physical modeling; laser-probing techniques; lenses; measurement process simulation; mesh discretization; microstructured semiconductor devices; optical-wave propagation; temperature distribution; thermooptic effect; virtual experiments; Charge carriers; Charge measurement; Computational modeling; Current measurement; Laser modes; Laser theory; Optical propagation; Semiconductor devices; Semiconductor lasers; Temperature distribution;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2003.819895
Filename :
1256056
Link To Document :
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