DocumentCode
852057
Title
Comments on "Linearization techniques for nth-order sensor models in MOS VLSI technology
Author
Czarnul, Zdzlslaw
Author_Institution
Dept. of Electron. Circuits, Tech. Univ. of Gdansk, Poland
Volume
39
Issue
9
fYear
1992
Firstpage
677
Abstract
For the original article see ibid., vol.CAS-38, no.12, p.1439-49 (1991). The commenter points out that the concept of a circuit with four cross-coupled MOSFETs operating in the triode region, in which nonlinearities are canceled, was developed by him (ibid., vol.CAS-33, p.714-16 and 718-22, July 1986). This was not acknowledged by N.I. Khachab and M. Ismail, the authors of the above-titled paper.<>
Keywords
MOS integrated circuits; VLSI; electric sensing devices; linearisation techniques; semiconductor device models; MOS VLSI technology; four cross-coupled MOSFETs; nonlinearities cancellation; nth-order sensor models; triode region; Active filters; Consumer electronics; Differential equations; Electronic circuits; Integrated circuit synthesis; Integrated circuit technology; Linearization techniques; MOSFET circuits; Solid state circuits; Very large scale integration;
fLanguage
English
Journal_Title
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
Publisher
ieee
ISSN
1057-7130
Type
jour
DOI
10.1109/82.193326
Filename
193326
Link To Document