• DocumentCode
    852208
  • Title

    GaInAs/AlGaInAs DH and MQW lasers with 1.5-1.7 mu m lasing wavelengths grown by atmospheric pressure MOVPE

  • Author

    Gessner, R.

  • Author_Institution
    Siemens Res. Labs., Munchen, West Germany
  • Volume
    25
  • Issue
    8
  • fYear
    1989
  • fDate
    4/13/1989 12:00:00 AM
  • Firstpage
    516
  • Lastpage
    517
  • Abstract
    The first successful growth and fabrication of long wavelength (1.5-1.7 mu m) DH and MQW lasers by atmospheric pressure MOVPE in a ´phosphorus-free´ material system is reported. The GaInAs/AlGaInAs DH and MQW lasers were grown on InP substrates. DH lasers emitting at around 1690 nm exhibit threshold current densities down to 2.8 kA/cm2 at 25 degrees C; the characteristic temperature is 50 K in the 15-55 degrees C range. First MQW lasers with 1565 nm emission wavelength have threshold current densities around 3.2 kA/cm2.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 to 1.7 micron; 15 to 55 degC; 1565 nm; 1690 nm; 50 K; DH; InP; MQW; atmospheric pressure MOVPE; emission wavelength; lasing wavelengths; threshold current densities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890353
  • Filename
    46138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=852208