• DocumentCode
    852215
  • Title

    Resistive element using depletion mode MOSFETs

  • Author

    Shoemaker, P.A. ; Stewart, M. ; Shimabukuro, R.

  • Author_Institution
    Solid-State Electron. Div., Naval Ocean Syst. Centre, San Diego, CA, USA
  • Volume
    25
  • Issue
    8
  • fYear
    1989
  • fDate
    4/13/1989 12:00:00 AM
  • Firstpage
    518
  • Lastpage
    519
  • Abstract
    A two-terminal resistive element consisting of depletion-mode MOSFETs is described. This circuit can provide a combination of large resistance and extended range of linearity when compared with individual depletion-mode loads. A small-signal AC analysis has been performed to relate the frequency response of the element to the electrical parameters of the transistors and to the operating point. The circuit has been fabricated in thin-film silicon-on-sapphire and its operation demonstrated.
  • Keywords
    MOS integrated circuits; insulated gate field effect transistors; SOS; depletion mode MOSFETs; electrical parameters; frequency response; operating point; small-signal AC analysis; two-terminal resistive element;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890354
  • Filename
    46139
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=852215