Title :
Reduced power consumption in GaAs-based bipolar cascade lasers
Author :
Siskaninetz, W.J. ; Ehret, J.E. ; Dang, T.N. ; Van Nostrand, H.E. ; Lott, J.A. ; Nelson, T.R., Jr.
Author_Institution :
Sensors Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA
fDate :
10/10/2002 12:00:00 AM
Abstract :
A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. The current voltage characteristics of individual degenerately doped n+ and p+ regions grown by MBE were investigated and the most promising designs were placed within the individual laser substructures. This resulted in a 1 V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.
Keywords :
III-V semiconductors; gallium arsenide; laser cavity resonators; quantum well lasers; GaAs; MBE; bipolar cascade lasers; current voltage characteristics; degenerately doped regions; differential quantum efficiency; edge-emitting laser devices; epitaxially stacked lasers; lasing characteristics; multiple-cavity device; multiple-colour emission; p-doping concentration; reduced power consumption; room-temperature characteristics; stacked quantum well active regions; tunnel junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020857
