• DocumentCode
    852360
  • Title

    Novel silicon-on-insulator MOSFET for high-voltage integrated circuits

  • Author

    Ratnam, P.

  • Author_Institution
    Dept. of Electr. Eng., Toronto Univ., Ont., Canada
  • Volume
    25
  • Issue
    8
  • fYear
    1989
  • fDate
    4/13/1989 12:00:00 AM
  • Firstpage
    536
  • Lastpage
    537
  • Abstract
    A novel silicon-on-insulator MOSFET for high-voltage ICs is presented. Computer simulations are given to prove the high-voltage capability of the device structure. Also given is a practical implementation procedure.
  • Keywords
    CMOS integrated circuits; MOS integrated circuits; insulated gate field effect transistors; power integrated circuits; power transistors; CMOS IC; HV capability; HVIC; MOS IC; MOSFET; SOI device; Si; device structure; high-voltage integrated circuits; implementation procedure; n-channel devices; p-channel devices; power IC; simulations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890367
  • Filename
    46152
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=852360