MOCVD growth of GaAs/AlGaAs wavelength resonant periodic gain vertical cavity surface-emitting laser

Author

Schaus, C.F. ; Schaus, H.E. ; Sun, S. ; Raja, M.Y.A. ; Brueck, S.R.J.

Author_Institution

Centre for high Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

25

Issue

8

fYear

1989

fDate

4/13/1989 12:00:00 AM

Firstpage

538

Lastpage

539

Abstract

The first all-semiconductor GaAs/AlGaAs vertical cavity laser incorporating wavelength resonant periodic gain layers grown by metalorganic chemical vapour deposition is reported. The optically pumped structure exhibits a threshold of 0.5 nJ at 852 nm for 720 nm pulsed excitation and energy conversion efficiencies up to approximately 6%. The output linewidth is \n\n\t\t

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; laser cavity resonators; laser modes; laser transitions; optical pumping; semiconductor growth; semiconductor junction lasers; spectral line breadth; vapour phase epitaxial growth; 0.43 to 0.5 nJ; 6 percent; 60 mW; 852 nm; GaAs-AlGaAs; III-V semiconductors; MOCVD growth; distributed feedback; energy conversion efficiencies; epitaxial growth; metalorganic chemical vapour deposition; optically pumped structure; output linewidth; periodic gain layers; pulsed excitation; semiconductor laser; single longitudinal mode oscillation; surface-emitting laser; vertical cavity; wavelength resonant;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890368

Filename

46153