Title :
HfO2 and ZrO2 alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition
Author :
Taylor, S. ; Williams, P.A. ; Roberts, J.L. ; Jones, A.C. ; Chalker, P.R.
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
fDate :
10/10/2002 12:00:00 AM
Abstract :
Capacitance-voltage measurements are reported on MOSC devices with ZrO2 and HfO2 gate dielectrics fabricated using novel zirconium and hafnium alkoxide volatile mononuclear complexes. These complexes are significantly less reactive to air and moisture than existing Zr and Hf alkoxides. Feasibility is shown of using this liquid injection chemical vapour deposition method with these precursors for high-k gate dielectric realisation for submicron MOS devices.
Keywords :
MOCVD; MOS capacitors; dielectric thin films; hafnium compounds; interface states; permittivity; zirconium compounds; HfO2; MOS capacitors; ZrO2; accumulation conditions; alkoxide volatile mononuclear complexes; alternative gate dielectrics; capacitance-voltage measurements; depletion conditions; high-k gate dielectric; interface states; inversion conditions; liquid injection chemical vapour deposition; oxide growth rate; relative permittivity; submicron MOS devices; substrate temperature; work function differences;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020801
