Title :
Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor
Author_Institution :
Dept of Electr. Eng., Shibaura Inst. of Technol., Tokyo, Japan
fDate :
4/13/1989 12:00:00 AM
Abstract :
Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; relaxation; semiconductor device models; AlGaAs-GaAs; HBT; III-V semiconductors; cutoff frequency; device performance; energy relaxation time; energy transport model; heterojunction bipolar transistor; numerical simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890374
