• DocumentCode
    852424
  • Title

    High performance RF power MOSFET

  • Author

    Pathirana, G.P.V. ; Udrea, F.

  • Author_Institution
    Dept. of Eng., Cambridge Univ., UK
  • Volume
    38
  • Issue
    21
  • fYear
    2002
  • fDate
    10/10/2002 12:00:00 AM
  • Firstpage
    1286
  • Lastpage
    1288
  • Abstract
    A novel high voltage silicon RF LDMOSFET in SOI technology based on the 3D-RESURF concept is proposed. For the same blocking voltage rating, the new structure allows the LDMOSFET to have higher current handling capability at high gate voltages. This in turn causes the transconductance to be higher, leading to overall better RF performance.
  • Keywords
    UHF field effect transistors; buried layers; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 3D-RESURF concept; LDD resistance; RF power MOSFET; SOI technology; breakdown voltage; buried oxide; current handling capability; cutoff frequency; high performance; high transconductance; high voltage LDMOSFET; maximum unilateral gain; mobile charge; p-drift doping level;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020859
  • Filename
    1043724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=852424