DocumentCode
852454
Title
Power added efficiency optimisation of microwave transistor amplifier
Author
Algani, A. ; Wang, Huifang ; Konczykowska, Agnieszka
Author_Institution
CNET, Lab. de Bagneux, France
Volume
25
Issue
8
fYear
1989
fDate
4/13/1989 12:00:00 AM
Firstpage
542
Lastpage
543
Abstract
A high-efficiency microwave amplifier design routine which optimises the power added efficiency of any class (A, AB, B, C, D, E,. . .) of amplifier is reported. It has the advantage of a reduced variable number, and easy synthesis for input-output circuits. A heterojunction bipolar transistor amplifier at 1 GHz for mobile telephone applications has been optimised using this routine. The simulation result shows 71% of power added efficiency under class C operation.
Keywords
microwave amplifiers; network synthesis; optimisation; solid-state microwave circuits; time-domain synthesis; transistor circuits; design routine; heterojunction bipolar transistor; high-efficiency microwave amplifier; microwave transistor amplifier; mobile telephone applications; optimisation; power added efficiency; time domain design method;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890371
Filename
46164
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