Title :
GaAs/AlGaAs power heterobipolar transistor fabricated on silicon substrate
Author :
Ueda, Daisuke ; Lee, Woo Seung ; Ma, Tan ; Costa, David ; Harris, James S.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A GaAs/AlGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2.8 compared with that on bulk GaAs. Due to the newly developed monolithically grown ballast resistor in the emitter region, the experimentally fabricated device has shown the highest collector current of over 2.5 A for a device with an active device area of 0.14 mm2.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power transistors; 2.5 A; GaAs-AlGaAs-Si; III-V semiconductors; Si substrate; collector current; emitter region; heterojunction bipolar transistor; monolithically grown ballast resistor; power HBT; thermal conductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890849
