Title :
Tunable MQW-DBR laser with monolithically integrated GaInAsP/InP directional coupler switch
Author :
Hernandez-Gil, F. ; Koch, T.L. ; Koren, U. ; Gnall, R.P. ; Burrus, C.A.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
The authors report the successful monolithic integration of a GaInAsP/InP single-mode Delta kappa directional coupler switch with a 4-section tunable multiple-quantum-well distributed Bragg reflector laser. They obtain several mW of output power through the switch, with approximately 10 dB crosstalk either from the internal laser source or with external light injected through the parallel input port.
Keywords :
III-V semiconductors; directional couplers; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; laser tuning; optical couplers; optical switches; optical waveguides; semiconductor junction lasers; GaInAs-GaInAsP; GaInAs-InP; III-V semiconductors; MQW-DBR laser; directional coupler switch; distributed Bragg reflector laser; integrated optics; integrated optoelectronics; monolithic integration; multiple-quantum-well; optical waveguides; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890851
