High-performance dual-layer channel ITO/TZO/TFTs fabricated on glass substrate

High-performance fully transparent bottom-gate type dual-layer (ITO/TZO) channel thin-film transistors (ITO/TZO TFTs) have been successfully fabricated on a glass substrate at low temperature (below 100°C). The results show that dual-layer channel (ITO/TZO) TFTs, compared to the single channel TZO TFTs and ITO TFTs, exhibit better electrical properties, with a low I_off of 1.5 × 10^-11 A, a high on/off ratio of 5.78 × 10⁷, a high saturation mobility μ_s of 292 cm²/V·s, a high linear mobility μ_l of 105.4 cm²/V·s, a steep subthreshold swing of 0.33 V/decade and a threshold voltage V_th of 3.16 V. The results show that excellent device performance can be realised in ITO/TZO TFTs.