• DocumentCode
    85273
  • Title

    Novel Error Detection Scheme With the Harmonious Use of Parity Codes, Well-Taps, and Interleaving Distance

  • Author

    Sang Hoon Jeon ; Soonyoung Lee ; Sanghyeon Baeg ; Ilgon Kim ; Gunrae Kim

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Hanyang Univ., Ansan, South Korea
  • Volume
    61
  • Issue
    5
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    2711
  • Lastpage
    2717
  • Abstract
    This paper explores the effectiveness of error detection schemes in increasingly multiple-cell upset-dominant technologies, specifically SRAM. A review of interleaving distance, parity codes, and well-taps is conducted to examine each attribute. Then, the paper proposes a novel error detection scheme with the harmonious use of the multiple-cell upset inhibition effects of well-taps, the detectability of parity codes, and an interleaving distance scheme to create an effective error detection scheme that is both flexible and has a high implementation prospect. A row depth model is created to assess the effectiveness of the proposed scheme. The model shows that advanced technologies with greater multiple-cell upset sizes and ratios will experience error detection failures with schemes such as single error correction-double error detection, whereas the proposed scheme remains effective. Experimental data supports the premise that well-taps inhibit multiple-cell upset, as it is found that 1% cross well-taps. The proposed scheme is recognized to be at least three times better against error detection failures than single error correction-double error detection.
  • Keywords
    error detection codes; nuclear electronics; parity check codes; SRAM; effective error detection scheme; error detection failures; interleaving distance scheme; multiple-cell upset-dominant technologies; novel error detection scheme; parity codes detectability; parity codes harmonious use; row depth model; single-error correction-double error detection; Companies; Equations; Error correction codes; Feature extraction; Performance evaluation; Random access memory; Reliability; Effective interleaving distance; error correction code; interleaving distance; multiple-bit upset; multiple-cell upset; parity code; row depth; single error correction-double error detection; single-event effect; well-tap;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2349504
  • Filename
    6909089