Title :
Stoichiometry and microwave properties of YIG films grown by ion beam sputtering
Author :
Chevrier, F. ; Artinian, M. ; Le Gall, H.
Author_Institution :
Lab. de Magnetisme et d´´Opt. des Solides, CNRS, Meudon, France
fDate :
9/1/1990 12:00:00 AM
Abstract :
The epitaxial growth of garnet films by the ion beam sputtering method with postdeposition annealing is discussed. Collector angles (θ) and annealing temperatures turned out to be the key parameters during deposition. Stoichiometric composition is very dependent on the (θ) and is obtained when θ is 25-35°. The influence of the annealing temperature upon the magnitude of the ferromagnetic resonance linewidth depends on the composition
Keywords :
annealing; ferromagnetic resonance; garnets; magnetic epitaxial layers; magnetic thin films; sputter deposition; stoichiometry; yttrium compounds; YFe5O12; YIG films; epitaxial growth; ferromagnetic resonance linewidth; ion beam sputtering; microwave properties; postdeposition annealing; stoichiometry; Annealing; Garnet films; Ion beams; Magnetic films; Magnetic resonance; Microwave devices; Sputtering; Substrates; Temperature; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
