DocumentCode
853348
Title
Stoichiometry and microwave properties of YIG films grown by ion beam sputtering
Author
Chevrier, F. ; Artinian, M. ; Le Gall, H.
Author_Institution
Lab. de Magnetisme et d´´Opt. des Solides, CNRS, Meudon, France
Volume
26
Issue
5
fYear
1990
fDate
9/1/1990 12:00:00 AM
Firstpage
1474
Lastpage
1476
Abstract
The epitaxial growth of garnet films by the ion beam sputtering method with postdeposition annealing is discussed. Collector angles (θ) and annealing temperatures turned out to be the key parameters during deposition. Stoichiometric composition is very dependent on the (θ) and is obtained when θ is 25-35°. The influence of the annealing temperature upon the magnitude of the ferromagnetic resonance linewidth depends on the composition
Keywords
annealing; ferromagnetic resonance; garnets; magnetic epitaxial layers; magnetic thin films; sputter deposition; stoichiometry; yttrium compounds; YFe5O12; YIG films; epitaxial growth; ferromagnetic resonance linewidth; ion beam sputtering; microwave properties; postdeposition annealing; stoichiometry; Annealing; Garnet films; Ion beams; Magnetic films; Magnetic resonance; Microwave devices; Sputtering; Substrates; Temperature; Voltage;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.104416
Filename
104416
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