DocumentCode :
85369
Title :
Experimental Investigation of the Tunneling Injection Boosters for Enhanced 
ETSOI Tunnel FET
Author :
Villalon, A. ; Le Royer, Cyrille ; Casse, M. ; Cooper, Daniel ; Hartmann, J.-M. ; Allain, F. ; Tabone, C. ; Andrieu, F. ; Cristoloveanu, S.
Author_Institution :
Lab. for Electron. & Inf. Technol., French Atomic Energy & Alternative Energies Comm., Grenoble, France
Volume :
60
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
4079
Lastpage :
4084
Abstract :
We compare the performance of planar fully depleted silicon-on-insulator tunnel FETs (TFETs) with different tunneling boosters. The effectiveness of each of the following boosters is studied independently: low-bandgap channel or source-drain material as well as abrupt junction and ultrathin body. These boosters lead to an increase in the tunneling rate, and thus to enhanced ON current. The ION values of our devices vastly outperform literature results, paving the way for future CMOS-like TFET circuits.
Keywords :
elemental semiconductors; energy gap; field effect transistors; silicon; silicon-on-insulator; tunnelling; CMOS-like TFET circuits; ION ETSOI tunnel FET; ION values; ON current; Si; low-bandgap channel; planar fully depleted silicon-on-insulator; source-drain material; tunneling boosters; tunneling injection boosters; tunneling rate; ultrathin body; Annealing; Logic gates; Silicon; Silicon germanium; Transistors; Tunneling; Band-to-band tunneling; complementary metal-oxide-semiconductor; field-effect transistor (FET); silicon-on-insulator; tunneling FET; tunneling boosters;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2287610
Filename :
6657754
Link To Document :
