• DocumentCode
    85369
  • Title

    Experimental Investigation of the Tunneling Injection Boosters for Enhanced I_{ON} ETSOI Tunnel FET

  • Author

    Villalon, A. ; Le Royer, Cyrille ; Casse, M. ; Cooper, Daniel ; Hartmann, J.-M. ; Allain, F. ; Tabone, C. ; Andrieu, F. ; Cristoloveanu, S.

  • Author_Institution
    Lab. for Electron. & Inf. Technol., French Atomic Energy & Alternative Energies Comm., Grenoble, France
  • Volume
    60
  • Issue
    12
  • fYear
    2013
  • fDate
    Dec. 2013
  • Firstpage
    4079
  • Lastpage
    4084
  • Abstract
    We compare the performance of planar fully depleted silicon-on-insulator tunnel FETs (TFETs) with different tunneling boosters. The effectiveness of each of the following boosters is studied independently: low-bandgap channel or source-drain material as well as abrupt junction and ultrathin body. These boosters lead to an increase in the tunneling rate, and thus to enhanced ON current. The ION values of our devices vastly outperform literature results, paving the way for future CMOS-like TFET circuits.
  • Keywords
    elemental semiconductors; energy gap; field effect transistors; silicon; silicon-on-insulator; tunnelling; CMOS-like TFET circuits; ION ETSOI tunnel FET; ION values; ON current; Si; low-bandgap channel; planar fully depleted silicon-on-insulator; source-drain material; tunneling boosters; tunneling injection boosters; tunneling rate; ultrathin body; Annealing; Logic gates; Silicon; Silicon germanium; Transistors; Tunneling; Band-to-band tunneling; complementary metal-oxide-semiconductor; field-effect transistor (FET); silicon-on-insulator; tunneling FET; tunneling boosters;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2287610
  • Filename
    6657754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=85369