DocumentCode :
853782
Title :
Flash memory: towards single-electronics
Author :
Aaron, V.-Y. ; Leburton, Jean-Pierre
Volume :
21
Issue :
4
fYear :
2002
Firstpage :
35
Lastpage :
41
Abstract :
Since their invention in 1984, flash memories have evolved from single device components to megabit nonvolatile memory (NVM) arrays. Flash memories were born from the need to find easily scalable replacements for EPROMs (erasable programmable read only memory) and EEPROMs (electrically erasable programmable read only memory). Unlike EPROMs and EEPROMs, flash memory cells provide single-cell electrical program and fast simultaneous block electrical erase. Thus, a small cell size is combined with a fast in-system erase capability.
Keywords :
flash memories; integrated memory circuits; fast in-system erase capability; fast simultaneous block electrical erase; flash memories; megabit nonvolatile memory arrays; single-cell electrical program; single-electronics; Acceleration; Channel hot electron injection; Cranes; Flash memory; Kinetic energy; Lattices; MOSFET circuits; Nonvolatile memory; Tunneling; Voltage control;
fLanguage :
English
Journal_Title :
Potentials, IEEE
Publisher :
ieee
ISSN :
0278-6648
Type :
jour
DOI :
10.1109/MP.2002.1044216
Filename :
1044216
Link To Document :
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