DocumentCode :
853971
Title :
State-space Integral-equation method for the S-domain modeling of planar circuits on semiconducting substrates
Author :
Conciauro, Giuseppe ; Arcioni, Paolo ; Bressan, Marco
Author_Institution :
Dept. of Electron., Univ. of Pavia, Italy
Volume :
51
Issue :
12
fYear :
2003
Firstpage :
2315
Lastpage :
2326
Abstract :
This paper presents a new and very efficient integral method for the electromagnetic modeling of planar circuits on multilayered semiconducting substrates. Differently from standard integral approaches, the method leads to a state-space model of the circuit. This model directly permits to find the admittance matrix in the form of a reduced-order pole expansion in the S-domain through standard Krylov sub-space techniques. Three examples demonstrate the really good performances of the method in terms of accuracy and rapidity.
Keywords :
domains; electromagnetic field theory; elemental semiconductors; metallisation; microwave integrated circuits; silicon; silicon compounds; state-space methods; Krylov sub-space techniques; S-domain modeling; Si-SiO2; electromagnetic modeling; microwave integrated circuits; multilayered semiconducting substrates; planar circuits; state-space integral-equation; Admittance; Electromagnetic modeling; Integral equations; Integrated circuit modeling; Mathematical model; Metallization; Semiconductivity; Substrates; Transmission line matrix methods; Very large scale integration;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2003.819767
Filename :
1256763
Link To Document :
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