DocumentCode :
854217
Title :
Baseband impedance and linearization of FET circuits
Author :
Brinkhoff, James ; Parker, Anthony Edward ; Leung, Martin
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume :
51
Issue :
12
fYear :
2003
Firstpage :
2523
Lastpage :
2530
Abstract :
Baseband impedance has been identified as having a positive or negative effect on the intermodulation distortion of microwave circuits. The effect can be assessed or utilized with the aid of previously proposed figures-of-merit. Under certain situations, intermodulation cancellation can be achieved simply by adding resistance to the bias network. The impact of baseband impedance on the performance of derivative superposition amplifiers is analyzed. A bias region was studied that exhibits a good second- and third-order intermodulation with minimal intermodulation dependence on baseband impedance. This allows the effective use of the derivative superposition technique in baseband amplifiers, as well as giving wide-band linearization performance in RF amplifiers.
Keywords :
intermodulation distortion; linearisation techniques; microwave amplifiers; microwave circuits; microwave field effect transistors; FET circuits; RF amplifiers; baseband amplifiers; baseband impedance; bias network; bias region; derivative superposition amplifiers; derivative superposition technique; figure of merit; intermodulation cancellation; intermodulation distortion; microwave circuits; resistance; second-order intermodulation; third-order intermodulation; wide-band linearization; Bandwidth; Baseband; Broadband amplifiers; FET circuits; Frequency; Impedance; Intermodulation distortion; Microwave circuits; Nonlinear distortion; Radiofrequency amplifiers;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2003.819208
Filename :
1256785
Link To Document :
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