Title :
Implementation of nonquasi-static effects in compact bipolar transistor models
Author :
Cherepko, Sergey V. ; Hwang, James C M
Author_Institution :
Dept. of Electr. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Large-signal implementation of nonquasi-static (NQS) effects in bipolar transistors is reviewed. An approach is proposed to introduce first-order NQS correction to typical quasi-static phenomenological models. Both charge- and noncharge-conserving implementations are considered. The resulted large-signal equivalent-circuit model compares well with the two-dimensional physical model in simulating HBT transient response under high-current operations. The present approach advances the state-of-the-art by allowing arbitrary bias dependence of transit times in large-signal NQS models.
Keywords :
equivalent circuits; heterojunction bipolar transistors; semiconductor device models; transient response; HBT transient response; bias dependence; charge conserving implementations; compact bipolar transistor models; first order nonquasistatic effects; heterojunction bipolar transistors; high-current operation; large-signal equivalent-circuit model; large-signal implementation; noncharge conserving implementations; two-dimensional physical model; Bipolar transistors; Charge carrier processes; Circuit simulation; Cutoff frequency; Dispersion; Electrons; Equivalent circuits; Heterojunction bipolar transistors; Nonlinear circuits; Transient response;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2003.819780
