Investigation and Simulation of Work-Function Variation for III–V Broken-Gap Heterojunction Tunnel FET

Author

Chih-Wei Hsu ; Ming-Long Fan ; Hu, Vita Pi-Ho ; Pin Su

Author_Institution

Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

3

Issue

3

fYear

2015

fDate

May-15

Firstpage

194

Lastpage

199

Abstract

This paper investigates and compares the impacts of metal-gate work-function variation (WFV) on III-V heterojunction tunnel FET (HTFET), homojunction TFET, and FinFET devices using a novel Voronoi method to capture the realistic metal-gate grain patterns for Technology Computer Aided Design atomistic simulations. Due to the broken-gap nature, HTFET shows significantly steeper subthreshold slope and higher susceptibility to WFV near OFF state. For ON current variation, both the HTFET and homojunction TFET show better immunity to WFV than the III-V FinFET. Device design using source-side underlap to mitigate the impact of WFV on HTFET is also assessed.

Keywords

III-V semiconductors; MOSFET; computational geometry; high electron mobility transistors; FinFET devices; HTFET; III-V broken-gap heterojunction tunnel FET; OFF state; ON current variation; Technology Computer Aided Design atomistic simulations; Voronoi method; WFV; device design; homojunction TFET; metal-gate work-function variation; realistic metal-gate grain patterns; source-side; subthreshold slope; FinFETs; IEEE Electron Devices Society; Indium gallium arsenide; Junctions; Logic gates; Metals; Tunneling; Heterojunction Tunnel FET (HTFET); Work-function variation (WFV); heterojunction tunnel FET (HTFET); work-function variation (WFV);

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2015.2408356

Filename

7053925