DocumentCode :
854746
Title :
Ion-sensitive field-effect transistors in standard CMOS fabricated by post processing
Author :
Jakobson, C.G. ; Dinnar, U. ; Feinsod, M. ; Nemirovsky, Y.
Author_Institution :
Dept. of Biomed. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
2
Issue :
4
fYear :
2002
fDate :
8/1/2002 12:00:00 AM
Firstpage :
279
Lastpage :
287
Abstract :
Highly integrated ion-sensitive field-effect transistor (ISFET) microsystems require the monolithic implementation of ISFETs, CMOS electronics, and additional sensors on the same chip. This paper presents new ISFETs in standard CMOS, fabricated by post-processing of a standard CMOS VLSI chip. Unlike CMOS compatible ISFETs fabricated in a dedicated process, the new sensors are directly combined with state-of-the-art CMOS electronics and are subject to continuous technology upgrading. The ISFETs presented include an intermediate gate formed by one or more conducting layers placed between the gate oxide and the sensing layer. The combination of the highly isolating gate oxide of the MOS with a leaky or conducting sensing layer allows the use of low temperature materials that do not damage the CMOS chip. The operation of ISFETs with an intermediate gate and sensing layers fabricated at low temperature is modeled. ISFETs with a linear pH response and drift as low as 0.3 mV/h are reported.
Keywords :
CMOS integrated circuits; VLSI; integrated circuit design; integrated circuit measurement; integrated circuit modelling; ion sensitive field effect transistors; pH measurement; CMOS electronics; CMOS integrated ISFET; ISFET drift; ISFET monolithic implementation; MOS gate oxide isolation; VLSI; conducting layer intermediate gate; ion-sensitive field-effect transistor microsystems; ion-sensitive sensors; linear pH response; low temperature fabrication; low temperature materials; post processing fabrication; sensing layer; Aluminum; Biochemical analysis; CMOS process; CMOS technology; FETs; Fabrication; MOSFETs; Semiconductor device modeling; Temperature sensors; Very large scale integration;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2002.802237
Filename :
1044380
Link To Document :
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