Title :
Fabrication of monolithic twin-GaInAs pin photodiode for balanced dual-detector optical coherent receivers
Author :
Wada, O. ; Miura, Shun ; Mikawa, T. ; Aoki, O.
Author_Institution :
Fujitsu Labs., Atsugi
fDate :
4/28/1988 12:00:00 AM
Abstract :
A monolithic twin-GaInAs/InP pin photodiode with planar, embedded structure has been fabricated for optical coherent receiver applications. High-uniformity (±1·5%) quantum efficiency and low capacitance (0·3 pF) have been achieved, and its advantage has been demonstrated by the intensity noise suppressions of a dual-detector balanced heterodyne receiver (better than -15 dB up to 4·2 GHz)
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical communication equipment; photodiodes; receivers; 0.3 pF; 4.2 GHz; GaInAs-InP monolithic twin photodiode; PIN photodiode; balanced dual-detector optical coherent receivers; dual-detector balanced heterodyne receiver; intensity noise suppressions; low capacitance; planar embedded structure; quantum efficiency;
Journal_Title :
Electronics Letters
