مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

854825

Title :

Epitaxial FET cutoff voltage

Author :

Warner, R.M.

Volume :

Issue :

fYear :

1963

fDate :

6/1/1963 12:00:00 AM

Firstpage :

939

Lastpage :

940

Keywords :

Electrical resistance measurement; Epitaxial growth; FETs; Geometry; Impurities; Ionization; Temperature; Testing; Thickness measurement; Voltage;

fLanguage :

English

Journal_Title :

Proceedings of the IEEE

Publisher :

ieee

ISSN :

0018-9219

Type :

jour

DOI :

10.1109/PROC.1963.2337

Filename :

1444267

Link To Document :