DocumentCode
854896
Title
Negative resistance and hysteresis in a germanium-silicon heterojunction
Author
Wei, L.Y. ; Shewchun, J.
Volume
51
Issue
6
fYear
1963
fDate
6/1/1963 12:00:00 AM
Firstpage
946
Lastpage
946
Keywords
Breakdown voltage; Frequency; Germanium silicon alloys; Heterojunctions; Hysteresis; Ionization; P-i-n diodes; Semiconductor diodes; Silicon germanium; Temperature;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1963.2344
Filename
1444274
Link To Document