• DocumentCode
    854987
  • Title

    Characterization of Semiconductor Materials by Charged Particle Activation

  • Author

    Blondiaux, G. ; Giovagnoli, A. ; Koemmerer, C. ; Valladon, M. ; Debrun, J.L. ; Hallais, J. ; Huber, A.

  • Author_Institution
    C.N.R.S., Service du Cyclotron, 3A, Rue de la Férollerie, 45045 Orléans cedex (France)
  • Volume
    28
  • Issue
    2
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    1675
  • Lastpage
    1678
  • Abstract
    Results obtained during the past few years by research groups working on joint projects, mainly in view of a better knowledge of GaAs, are summarized here. The procedures of radioactivation analysis with charged particles (deuterons and tritons) are described to some extent. Finally, some important aspects of charged particle activation analysis, namely : calibration, etching after irradiation and diffusion during irradiation, are discussed.
  • Keywords
    Activation analysis; Calibration; Cyclotrons; Epitaxial layers; Etching; Gallium arsenide; Indium phosphide; Instruments; Oxygen; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4331497
  • Filename
    4331497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=854987