Title :
Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD
Author :
Pinzone, C.J. ; Dupuis, Russell ; Ha, N.T. ; Luftman, H.S.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Heavily doped n+ InP and GaInAs epitaxial layers have been grown by metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn-doped InP and GaInAs layers have been grown with doping levels as high as n300K approximately=3.3*1019 cm-3 and n300K approximately=6.1*1019 cm-3, respectively. Analysis of the Sn concentration in InP:Sn and GaInAs:Sn layers using secondary ion mass spectrometry (SIMS) shows that all of the Sn is ionised in InP and GaInAs. Hall measurements of Nd-Na at 300 and 77 K indicate that the Sn is uncompensated up to these levels. SIMS analysis also shows that the use of TESn for the growth of n+ InP and GaInAs layers results in no severe memory effects and that abrupt Sn doping profiles can be achieved.
Keywords :
Hall effect; III-V semiconductors; carrier density; doping profiles; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; heavily doped semiconductors; indium compounds; secondary ion mass spectroscopy; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; tin; vapour phase epitaxial growth; GaInAs:Sn; Hall measurements; III-V semiconductors; InP:Sn; SIMS analysis; Sn concentration; abrupt doping profiles; atmospheric-pressure MOCVD; dopant source; epitaxial growth; heavily doped n + epitaxial layers; metalorganic chemical vapour deposition; secondary ion mass spectrometry; tetraethyltin;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890880
