DocumentCode
855104
Title
9 GHz bandwidth, 8-20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technology
Author
Ishihara, Noboru ; Nakajima, O. ; Ichino, H. ; Yamauchi, Yuji
Author_Institution
NTT LSI Labs., Kanagawa, Japan
Volume
25
Issue
19
fYear
1989
Firstpage
1317
Lastpage
1318
Abstract
A wideband and controllable-gain amplifier utilising a new parallel feedback technique, which can enhance the bandwidth and can control the gain keeping output DC voltages constant, has been developed using AlGaAs/GaAs HBT technology in monolithic form. This IC achieves a wide bandwidth of DC-9 GHz, and a controllable gain range of 8-20 dB with a total power dissipation of 640 mW at a power supply voltage of 9 V.
Keywords
bipolar integrated circuits; feedback; gain control; heterojunction bipolar transistors; linear integrated circuits; wideband amplifiers; 0 to 9 GHz; 640 mW; 8 to 20 dB; 9 GHz; 9 V; AlGaAs-GaAs; HBT technology; IC; broadband operation; controllable-gain monolithic amplifier; parallel feedback technique; power supply voltage; total power dissipation; wideband;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890881
Filename
46203
Link To Document