Title :
Ion Implantation in Compound Semiconductor Research
Author_Institution :
Coordinated Science Laboratory and Department of Electrical Engineering University of Illinois at Urbana-Champaign Urbana, Illinois 61801
fDate :
4/1/1981 12:00:00 AM
Abstract :
Ion implantation is widely used in the fabrication of III-V compound semiconductor devices for microwave and optoelectronic applications and in high-speed integrated circuits. Other applications employ implantation as a tool for basic semiconductor research. This paper provides an overview of these applications, along with problems in the implantation and annealing of compounds and recent solutions to these problems.
Keywords :
Annealing; Gallium arsenide; III-V semiconductor materials; Ion implantation; Optical device fabrication; Semiconductor devices; Semiconductor films; Silicon; Substrates; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4331511