DocumentCode :
855156
Title :
Ion Implantation in Compound Semiconductor Research
Author :
Streetman, B.G.
Author_Institution :
Coordinated Science Laboratory and Department of Electrical Engineering University of Illinois at Urbana-Champaign Urbana, Illinois 61801
Volume :
28
Issue :
2
fYear :
1981
fDate :
4/1/1981 12:00:00 AM
Firstpage :
1741
Lastpage :
1746
Abstract :
Ion implantation is widely used in the fabrication of III-V compound semiconductor devices for microwave and optoelectronic applications and in high-speed integrated circuits. Other applications employ implantation as a tool for basic semiconductor research. This paper provides an overview of these applications, along with problems in the implantation and annealing of compounds and recent solutions to these problems.
Keywords :
Annealing; Gallium arsenide; III-V semiconductor materials; Ion implantation; Optical device fabrication; Semiconductor devices; Semiconductor films; Silicon; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1981.4331511
Filename :
4331511
Link To Document :
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