Title : 
Ion Implantation in Compound Semiconductor Research
         
        
        
            Author_Institution : 
Coordinated Science Laboratory and Department of Electrical Engineering University of Illinois at Urbana-Champaign Urbana, Illinois 61801
         
        
        
        
        
            fDate : 
4/1/1981 12:00:00 AM
         
        
        
        
            Abstract : 
Ion implantation is widely used in the fabrication of III-V compound semiconductor devices for microwave and optoelectronic applications and in high-speed integrated circuits. Other applications employ implantation as a tool for basic semiconductor research. This paper provides an overview of these applications, along with problems in the implantation and annealing of compounds and recent solutions to these problems.
         
        
            Keywords : 
Annealing; Gallium arsenide; III-V semiconductor materials; Ion implantation; Optical device fabrication; Semiconductor devices; Semiconductor films; Silicon; Substrates; Temperature;
         
        
        
            Journal_Title : 
Nuclear Science, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/TNS.1981.4331511