DocumentCode
85522
Title
A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules
Author
Zhiqiang Wang ; Xiaojie Shi ; Tolbert, Leon M. ; Fei Wang ; Blalock, Benjamin J.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Volume
29
Issue
7
fYear
2014
fDate
Jul-14
Firstpage
3720
Lastpage
3732
Abstract
This paper presents an active gate driver (AGD) for IGBT modules to improve their overall performance under normal condition as well as fault condition. Specifically, during normal switching transients, a di/dt feedback controlled current source and current sink is introduced together with a push-pull buffer for dynamic gate current control. Compared to a conventional gate drive strategy, the proposed one has the capability of reducing the switching loss, delay time, and Miller plateau duration during turn-on and turn-off transient without sacrificing current and voltage stress. Under overcurrent condition, it provides a fast protection function for IGBT modules based on the evaluation of fault current level through the di/dt feedback signal. Moreover, the AGD features flexible protection modes, which overcomes the interruption of converter operation in the event of momentary short circuits. A step-down converter is built to evaluate the performance of the proposed driving schemes under various conditions, considering variation of turn-on/off gate resistance, current levels, and short-circuit fault types. Experimental results and detailed analysis are presented to verify the feasibility of the proposed approach.
Keywords
convertors; fault currents; feedback; insulated gate bipolar transistors; overcurrent protection; AGD; IGBT modules; Miller plateau duration reduction; active gate driver; current levels; current sink; delay time reduction; di-dt feedback controlled current source; fast overcurrent protection; fault current level; feedback signal; flexible protection modes; momentary short circuits; normal switching transients; push-pull buffer; smart switching; step-down converter; switching loss reduction; turn-off transient; turn-on transient; turn-on-off gate resistance; Capacitance; Inductance; Insulated gate bipolar transistors; Logic gates; Switches; Switching loss; Transient analysis; Active gate driver (AGD); IGBT modules; Miller plateau; overcurrent protection; short circuit;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/TPEL.2013.2278794
Filename
6581901
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