DocumentCode
855277
Title
1.2V NOR flash memory in system-in-package
Author
Pulici, P. ; Lessio, T. ; Vigilante, A. ; Vanalli, G.P. ; Stoppino, P.P. ; Ripamonti, G. ; Losavio, A. ; Campardo, G.
Author_Institution
Dept. of Electron., Milano
Volume
42
Issue
23
fYear
2006
Firstpage
1334
Lastpage
1335
Abstract
A NOR Flash memory system, the supply voltage of which can be as low as 1.2 V, is described. The internal memory chip supply voltage (1.8 V) is obtained by means of a DC-DC converter totally included in the same package of the memory. This system represents a way to overcome technology limitations to generate a Flash device supplied at a voltage close to 1 V and below. The NOR Flash memory system is assembled in a ball grid array 88 balls 14times8times1.6 mm, with the same ballout of the standard Flash memory working at 1.8 V
Keywords
DC-DC power convertors; NOR circuits; ball grid arrays; flash memories; system-in-package; 1 V; 1.2 V; 1.6 mm; 1.8 V; 14 mm; 8 mm; DC-DC converter; NOR flash memory; ball grid array; flash device; internal memory chip; system-in-package;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20062248
Filename
4027813
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