Low-threshold GaInNAs single-quantum-well lasers with emission wavelength over 1.3 μm

Author

Adachi, K. ; Nakahara, K. ; Kasai, J. ; Kitatani, T. ; Tsuchiya, T. ; Aoki, M. ; Kondow, M.

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji

Volume

42

Issue

23

fYear

2006

Firstpage

1354

Lastpage

1355

Abstract

Low-threshold GaInNAs single-quantum-well (SQW) lasers with emission wavelength over 1.3 mum are demonstrated. Epitaxial layers of the lasers are grown using an aluminium-free gas-source molecular-beam epitaxy (GS-MBE) to prevent any impurity or contamination related to aluminium that might be incorporated into the GaInNAs active layer. The fabricated laser is believed it exhibit the lowest threshold-current density (200 A/cm²) among GaInNAs-SQW lasers grown by MBE. Moreover, record low threshold current (5.2 mA) and long-wavelength (1.31 mum) emission were achieved in a ridge-waveguide laser at 25degC under continuous-wave operation

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor thin films; 1.31 micron; 25 C; 5.2 mA; GaInNAs; aluminium free gas source molecular beam epitaxy; contamination; continuous-wave operation; emission wavelength; epitaxial layers; impurity; single quantum well lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20062982

Filename

4027825