Investigation of the Annihilation of Positrons in Semiconductor Compounds of GaAS, GaP and Si

The positron annihilation method was applied to study the effect of the magnetic field on the correlation curves and the mean lifetime of the process of the two gamma rays annihilation. Samples of single crystals of GaAs, GaP/Te, GaP/U and Si were used. A decrease in the rate and a reduction of the full width at half maximum (FWHM) for the correlation curves of the annihilating gamma rays. The mean lifetime of the positrons in the different crystals studied shows change in the long companent of the lifetimes due to the presence of the magnetic field.