Title :
High-speed thin-film transistor on flexible substrate fabricated at room temperature
Author :
Vaillancourt, J. ; Lu, X. ; Han, X. ; Janzen, D.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Lowell, MA
Abstract :
A high-speed thin-film transistor (TFT) on a regular transparency film is reported. The TFT was fabricated at room temperature using an electronic-grade carbon nanotube solution. The TFT shows a high field-effect mobility of ~47 662 cm2/Vs and a large current carrying capacity of ~30 mA. A high operation frequency exceeding 150 MHz has been demonstrated at a low gate voltage of a few volts. Such a TFT would be a critical building block for low-cost, large-area, and high-speed flexible printed electronics
Keywords :
carbon nanotubes; flexible electronics; high-speed integrated circuits; printed circuits; thin film transistors; 30 mA; carbon nanotube solution; field effect mobility; flexible substrate; high-speed flexible printed electronics; thin film transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062295
