DocumentCode
855551
Title
Low Dark Count Single-Photon Avalanche Diode Structure Compatible With Standard Nanometer Scale CMOS Technology
Author
Richardson, Justin A. ; Grant, Lindsay A. ; Henderson, Robert K.
Author_Institution
Imaging Div., ST Microelectron., Edinburgh, UK
Volume
21
Issue
14
fYear
2009
fDate
7/15/2009 12:00:00 AM
Firstpage
1020
Lastpage
1022
Abstract
A single-photon avalanche diode structure implemented in a 130-nm imaging process is reported. The device employs a p-well anode, rather than the commonly adopted p+, and a novel guard ring compatible with recent scaling trends in standard nanometer scale complementary metal-oxide-semiconductor technologies. The 50-mum 2 active area device exhibits a dark count rate of 25 Hz at 20 degC and a photon detection efficiency peak of 28% at 500 nm.
Keywords
avalanche diodes; nanometer scale CMOS technology; p-well anode; photon detection efficiency; single-photon avalanche diode; temperature 20 degC; Biomedical imaging; complementary metal–oxide–semiconductor (CMOS) integrated circuits; image sensors; p-n junctions; photodetectors; photodiodes;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2022059
Filename
4914791
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