High-performance 1.3 /spl mu/m InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

Author

Jin, C.Y. ; Liu, H.Y. ; Badcock, T.J. ; Groom, K.M. ; Gutiérrez, M. ; Royce, R. ; Hopkinson, M. ; Mowbray, D.J.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield

Volume

153

Issue

6

fYear

2006

fDate

12/1/2006 12:00:00 AM

Firstpage

280

Lastpage

283

Abstract

A high-growth-temperature GaAs spacer layer (HGTSL) is shown to significantly improve the performance of 1.3 mum multilayer InAs/GaAs quantum-dot (QD) lasers. The HGTSL inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved performance of QD lasers. To further reduce the threshold current density and improve the room-temperature characteristic temperature (T₀), the high-reflection (HR) coating and p-type modulation doping have been incorporated with the HGTSL technique. A very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A cm^-2 are achieved for a three-layer device with a 1 mm HR/HR cavity, while a very low threshold current density of 48 A cm^-2 and a negative T₀ are achieved in the p-doped lasers

Keywords

III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; laser beams; laser cavity resonators; light reflection; optical films; optical modulation; quantum dot lasers; semiconductor doping; thermo-optical effects; 1.3 mum; 1.5 mA; 293 to 298 K; GaAs spacer layer; InAs-GaAs; InAs/GaAs lasers; continuous-wave threshold current; high-growth-temperature spacer; high-reflection cavity; high-reflection coating; low threshold current laser; multilayer quantum dots; negative characteristic temperature laser; p-doped lasers; p-type modulation doping; quantum-dot lasers; room-temperature; threading dislocation formation; three-layer device; threshold current density;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:2006004

Filename

4027849