DocumentCode
855716
Title
Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching
Author
Zhang, Z.Y. ; Luxmoore, I.J. ; Jiang, Q. ; Liu, H.Y. ; Groom, K.M. ; Childs, D.T. ; Hopkinson, M. ; Cullis, A.G. ; Hogg, R.A.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield
Volume
43
Issue
10
fYear
2007
Firstpage
587
Lastpage
588
Abstract
Broadband quantum dot superluminescent light emitting diodes (LEDs) are realised by focused ion beam etching an angled facet in an edge emitting dot-in-well laser diode structure. The device exhibits a large and flat emission spectral width up to 142 nm at 0.3 mW, maximum CW output power as high as 3 mW, and effective facet reflectivity <1times10-6
Keywords
III-V semiconductors; focused ion beam technology; gallium arsenide; indium compounds; quantum dot lasers; sputter etching; superluminescent diodes; 0.3 mW; 3 mW; CW output power; InAs-InGaAs; angled facet; broadband quantum dot superluminescent LED; edge emitting dot-in-well laser diode structure; effective facet reflectivity; emission spectral width; focused ion beam etching; light emitting diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20070828
Filename
4202066
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