Title :
Modulation-doped InAs-InGaAs quantum dot longwave infrared photodetector with high quantum efficiency
Author :
Lu, X. ; Meisner, M.J. ; Vaillancourt, J. ; Li, J. ; Liu, W. ; Qian, X. ; Goodhue, W.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Lowell, MA
Abstract :
A modulation-doped InAs-InGaAs quantum dot (QD) longwave infrared photodetector (QDIP) is reported with a detection peak wavelength of 8.2 mum. The QDIP showed a high photoresponsivity of 0.8 A/W and a high quantum efficiency of 3.4% at the bias voltage of 0.4 V. The performance demonstration indicates that the modulation-doped QDIP is suitable for longwave infrared photodetection
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; 0.4 V; 3.4 percent; 8.2 micron; InAs-InGaAs; longwave infrared photodetection; modulation-doped quantum dot longwave infrared photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070512
